5^th Generation GSTBT ™ IGBT Modules / A-Series

Features:

• Combining 5th Generation CSTBT (Carrier Stored Trench Gate Bipolar Transistor) chip technology with a LPT (Light Punch-through) wafer for:
• Low V_CE(sat)
• High Short Circuit Robustness
• Reduced Gate Capacitance
• About 10% higher inverter output current and about 15% better performance at same inverter output current than other Trench IGBTs currently being marketed
• Cost optimised package sizes
• Excellent thermal conductivity by AIN isolation substrate
• Low internal inductance
• Significant improvement of power cycling capability by new wire bonding technology