5th Generation CSTBT ™ IGBT Modules / NF - Series

Features:

• Combining 5th Generation CSTBT ™ (Carrier Stored Trench Gate Bipolar Transistor chip technology with a LPT (Light Punch-through) wafer for:
  • LOW V_CE(SAT)
    (Typ. 1.7V@T_j=125° C for 600V and 2V@T_j=125° C for 1200V)
  • Hight Short Circuit Robustness
  • Reduced Gate Capacitance
• Showing one rank higher performance compared to competition
• Standard dual package equal to well accepted H-Series package
• Excellent thermal conductivity by AIN isolation substrate
• Low internal inductance (half of H-Series)
• Significant improvement of power cycling capability by new wire bonding technology
• Also available as Mega Power Dual IGBT Modules 1200V (900 & 1400A) and 1700V (1000A) for High Power UPS, Distributed Power Generation and General Purpose Inverters (Chopper modules on request)