EngNet Insulated Gate Bipolar Transistor (IGBT)
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Power Electronic Products International

Insulated Gate Bipolar Transistor (IGBT)

5th Generation CSTBT ™ IPMS / L-Series

5th Generation CSTBT ™ IPMS / L-Series

Features:

  • 5 th Generation IGBT™ chip with CSTBT technology and 1µm design rule process
  • Typical VCE(SAT)=
    1.5V@Tj=125° C for 600V and
    1.9V@Tj=125° C for 1200V
  • Integrated turn-on speed controller circuit optimises EMI performance
  • On-chip temperature sensor for Tj detection of CSTBT™ chip
  • Package size reduced by 32% compared to previous generation
  • Detection, protection and status indication circuits for short-circuit, over-temperature, and under-voltage (fault output available from upper arm devices)
  • Monolithic gate drive & protection logic
  • Up to 75A, solder pin & screw types with same base plate dimension

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