4^th Generation IGBT Modules / F-Series

Features:

• Extremely low V_CE(SAT):
  Typ. 1.6V for 600V device @ T_j = 125° C
  Typ. 1.9V for 1200V device @ T_j = 125° C
• Innovative Mitsubishi U package technology for a full optimisation of the chip performance
• Higher reliability due to solderless connections reduced internal inductance (1/3 of the value of a conventional module)
• Low EMI
• Current mirror emitter and Real Time Control (RTC) circuit to clamp the short circuit to a low level
• Improved Free Wheeling Diode characteristics
• Wide product range in 250V, 600V and 1200V