EngNet Insulated Gate Bipolar Transistor (IGBT)
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Power Electronic Products International

Insulated Gate Bipolar Transistor (IGBT)

New NFM - Series

New NFM - Series

Features:

  • Dedicated Design for High switching frequency resonant inverter power supply makes more suitable specially for Medical and Welding applications
  • Optimized performance for high switching frequency up to 30 kHz
  • Combining 5th Generation CSTBT ™ (Carrier Stored Trench Gate Bipolar Transistor) chip technology with LPT (Light Punch-through) wafer for Low VCE(SAT)

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